Wide Bandgap Technologies

We are experts in wide bandgap technologies. Some of our team members have been funded by the US Department of Energy, the National Science Foundation, and DOE PowerAmerica over the past 10 years to research on new converter topologies, EMI challenges, and miniaturized converter technologies suitable for Gallium-Nitride (GaN) and Silicon-Carbide (SiC) devices. Our team member’s contribution to WBG converter technologies was to the point that in 2013, our CTO was invited to publish an introductory article in IEEE Electrification magazine to explain some of the basic challenges and features associated with WBGs to the industry, “Wide-Bandgap Semiconductor Technology: Its impact on the electrification of the transportation industry”.
We have state-of-the-art converter layout and gate driver technique to minimize oscillations, minimize stress and EMI, and maximize efficiency in converters utilizing GaN and SiC devices. This includes Finite Element Modeling services for analysis of electromagnetic radiation and interference. We offer dc-dc converters, inverters, grid-tied bidirectional chargers and harvesters, drives, … using wide bandgap devices. In particular, we utilize synchronous-rectification-clamped multi-level inverter topologies for clients who need GaN-based inverters for industrial applications where the dc-link voltage is above 500V and current switch availability does not allow for such dc-links. We have developed products for our clients to operate at 950V using 650V GaNSystems™ devices in a three-level three-phase synchronous-rectification-clamped topology. Furthermore, our CTO has developed a 150kW prototype of a medium-voltage SST using SiC devices for the Department of Energy. As a result, we are well-versed to design your next WBG power converter.